Figure 2. Average relative bulk disorder in Si bombarded at different temperatures (given in legends in units of °C) with a pulsed beam of 500 keV Ar ions with Fon = 1.9 × 1013 cm−2 s−1 and ton = 1 ms as a function of the passive portion of the beam duty cycle (toff).
Results of fitting the data with the first and second order decay equations are shown by solid and dashed lines, respectively. Results are separated into panels for clarity.