Figure 2. Capacitance-Voltage (C-V) characteristics of the MOSCAP with monolayer MoS₂ measured at a range of low and high frequencies from 1 kHz to 1 MHz.

(a–d) A repeatability check using four different samples confirms the consistency of the C-V measurement results. (e) The depletion capacitance and conductance-voltage (G_p/ω-V) characteristics measured at a low frequency of 1 kHz. The stretch-out or bump seen in the C-V curve as a result of interface traps is evidenced by the G_p/ω peak which unambiguously marks the activity of midgap traps that represents the losses due to the exchange of carriers with the interface traps.