Fig. 5.

(A) Schematic structure and R(T) measurements of the electric double-layer field-effect transistor of YBCO with an interlayer. Schematic representation of the gating device showing the configuration with an interlayer between the YBCO and the IL. B and C show resistance versus temperature curves measured at different gate voltages (from 0 V to 1.8 V) when the interlayer is amorphous ALO and isostructural PBCO, respectively. Whereas the amorphous ALO is acting as a physical barrier preventing oxygen diffusion, the PBCO interlayer acts as an oxygen reservoir allowing oxygen migration from the YBCO. C shows a similar behavior of the resistance versus temperature curves of deoxygenated YBCO samples.