Figure 4.

Nanodevices based on black phosphorus. (a) Current saturation curve of the black phosphorus field effect transistor along the x direction. The channel length of the transistor is 1 μm with 5 nm thickness black phosphorus film (Reproduced with permission of [23]. Copyright Macmillan Publishers Limited, 2014). (b) Transfer curve of the p-n diode consist of black phosphorus and MoS₂ monolayer (Reproduced with permission of [6]. Copyright American Chemical Society, 2014). (c) Schematic and images of the multilayer black phosphorus field effect transistor used for chemical sensing. (d) NO₂ gas sensing performance of the black phosphorus field effect transistor. Relative conductance change is represented during 5000 s with different ${\mathrm{NO}}_2$ concentration (Reproduced with permission of [7]. Copyright American Chemical Society, 2015).