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. 2017 Jan 6;18(1):17–25. doi: 10.1080/14686996.2016.1253409

Table 2. Capacitive-coupling ratios of planar and SiNW DG FETs measured at room temperature and 120°C.

  Capacitive-coupling ratio at 25°C Capacitive-coupling ratio at 120°C Δ Capacitive-coupling ratio Error percentage (%)
Planar DG FET 9.1 11.1 2.0 22.2
SiNW DG FET 18.0 18.4 0.5 2.6