. 2017 Jan 24;7:39844. doi: 10.1038/srep39844

Table 2. Comparison of exciton binding energies |E_b| and GW band gaps.

	MoS₂	hBN	Si(111)
Binding energy
Present	0.44	1.90	0.20
Ab initio	0.15²², 0.43⁴, 0.65²⁵	1.8³², 2.05⁴, 2.1²⁰	0.26¹⁸
GW and TB gaps
Present	2.42	8.00	0.66
Ab initio	2.48³³, 2.7²⁵	7.9³², 7.4²⁰	0.62¹⁷, 0.69¹⁸

All values are in eV. Note, only exciton binding energies are actually calculated in the present work. Appropriate TB band gaps are ensured by using TB parameters which ensure agreement between experimental and theoretical exciton features. Superscripts indicate references.

Table 2. Comparison of exciton binding energies |Eb| and GW band gaps.

Table 2. Comparison of exciton binding energies |E_b| and GW band gaps.