Table 1.
Device architecture | V oc [V] | J sc [mA cm−2] | FF | PCE [%] | |
---|---|---|---|---|---|
Device A | CH3NH3PbI2.85Br0.15 on Al2O3 | 1.17 | 13.9 | 0.66 | 10.7 |
Device B | CH3NH3PbI3 on Al2O3 | 1.01 | 17.2 | 0.65 | 11.3 |
Device C | CH3NH3PbI2.85Br0.15 on Al2O3 with Au@SiO2 NRs | 1.16 | 17.4 | 0.68 | 13.7 |
Device D | CH3NH3PbI3 on Al2O3 with Au@SiO2 NRs | 0.99 | 18.7 | 0.66 | 12.2 |
Device E | CH3NH3PbI2.85Br0.15 on Al2O3 with Au@SiO2 nanospheres | 1.16 | 15.3 | 0.65 | 11.5 |