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. 2016 Jan 1;23(Pt 1):353–368. doi: 10.1107/S160057751501783X

Table 2. ID24 beamline main characteristics.

Beamline name ID24
Source U27 1.6 m + U27 1.4 m + Revolver U27/U32 1.4 m + U32 1.6 m
Primary slits 3 mm × 1.5 mm located at 26.8 m
Polychromator Si(111) or Si(311)
Mirrors Two mirrors in KB configuration @ 3 mrad (Pt/Si/Rh coating)
Energy range 5–28 keV
Beam size at 7 keV (FWHM) 3 µm × 3 µm using a Si (111) Bragg polychromator and a vertically refocusing Si mirror at 4.5 mrad
Flux on sample at 7 keV 1 × 1014 photons s−1 at 200 mA with Si(111) Bragg polychromator and two Si KB mirrors at 3 mrad
Beam size at 24 keV (FWHM) 30 µm × 100 µm (FWHM) using a Si(111) Laue polychromator and no vertically refocusing mirror
Flux on sample at 24 keV 4 × 1013 photons s−1 at 200 mA with Si(111) Laue polychromator and two Pt-coated KB mirrors at 3 mrad
Detectors Two-dimensional FReLoN CCD camera, one-dimensional Hamamatsu CCD camera, XH Ge microstrip detector
Sample environments In situ laser heating for the DAC (P < 300 GPa, T < 5000 K), He-flow cryostat for DAC, high-temperature reactors, plug flow capillary microreactors, DRIFTS spectrometer, stopped-flow cell, UV–Vis spectrometer, pulsed magnetic fields (B < 30 T) and various magnet devices for XMCD and XMLD

Measured with a calibrated Si diode.