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. 2017 Feb 20;7:42368. doi: 10.1038/srep42368

Figure 4. Logarithmic ID-VDS characteristics showing the blocking behaviour of C-H diamond MOSFETs with a common gate width (25 μm) in the off-state for various LGD values of 9, 16, 17, 20 and 22 μm.

Figure 4

Solid lines represent the source-drain current (IDS) and dotted lines represent the source-gate-drain current (IDGS).(a) For LGD values of 9, 16, and 22 μm, the breakdown voltages are VB = 996, 1662, and 1646 V at room temperature, respectively. (b) For LGD of 17 μm, the breakdown voltages are VB = 1516 and 1270 V at 200 °C and 300 °C, respectively.