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. 2017 Feb 20;7:42368. doi: 10.1038/srep42368

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The MOSFETs are composed of a 200-nm-thick Al₂O₃ layer as the gate insulator and 200- or 400-nm-thick Al₂O₃ layers acting as a passivation layer between the gate metal and drain metal. V_GS for the off-states are +20- + 60 V.