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. 2017 Feb 20;7:42368. doi: 10.1038/srep42368

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The current density is normalized with respect to the gate width. The temperature dependence of a MOSFET under drain source bias of 10 V and 50 V and that of a junction FET²⁵ and a MESFET²³ with a boron-doped channel at V_DS = 10 V are also shown.