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. 2017 Feb 17;8:14552. doi: 10.1038/ncomms14552

Figure 4. Charge-neutral bilayer graphene in the Corbino and Hall bar geometries.

Figure 4

(a) Optical image of one of our devices with a Hall bar and two Corbino disks. The left-disk image is coloured to indicate source, drain and top gate electrodes. (b) Cross-sectional schematic of our double-gated Corbino devices. (c) Resistivity ρ at the CNP for Corbino and Hall bar geometries as a function of D. For the Corbino device, ρ changes exponentially over three orders of magnitude. The Hall bars exhibit saturation to a few RQ. (d) Arrhenius plot for ρ(T). The energy gap Egap is calculated from the linear slopes at T>100 K, which are similar for both Corbino and Hall bar geometries. Below 50 K, the Hall bar device exhibits little T dependence. Inset: Egap found for various D (symbols). The blue curve is tight-binding calculations for the BLG gap from ref. 3.