Table 1.

Film thickness and water contact angles of some pNIPAAm, 50/50 APTES/pNIPAAm and 50/50 BTMS/pNIPAAm films. The average and standard derivation reported were from measurements of three to six films.

Films	film thickness (nm)* after rinsing	water contact angle (°) after rinsing, at 40°C
non cured pNIPAAm	0.4 ± 0.2	7.4 ± 0.5
cured pNIPAAm	3.8 ± 0.6	58.5 ± 2.1
non-cured APTES layer	1.2 ± 0.2	38.3 ± 2.1
non-cured 50/50 APTES/pNIPAAm	0.8 ± 0.3	28.7 ± 0.8
cured 50/50 APTES/pNIPAAm	25 – 35**	68.9 ± 2.2
cured 50/50 BTMS/pNIPAAm	3.2 ± 0.3	57.8 ± 0.4

^*The average silicon oxide layer of 2.5 nm, measured for our silicon wafer, has been subtracted from all the thickness values reported in this table. This slightly thicker (2.5 nm) than usual (~ 1.5 nm) SiOx layer could be the result of the growth of SiOx from the UV/Ozone oxidization process applied for cleaning the wafer.

^**The film thickness of the cured 50/50 APTES/pNIPAAm blend films depended on the age of solution used for spin-coating, so the value of the rinsed film varied in this range.