Table 4.

Atomic % of C, O, N and Si, obtained from the XPS survey scans of the top layer of films presented in Figs. 3 & 5.

element atomic %	pNIPAAm cured (~ 46 nm)	50/50 APTES/pNIPAAm					50/50 BTMS/pNIPAAm cured (~ 46 nm)
		non-cured (~ 44 nm)	cured, not rinsed (~ 42 nm)	cured rinsed (~ 29 nm)	cured, rinsed, etched & rinsed (~ 12 nm)	cured, rinsed, etched & rinsed (~ 3.5 nm)*
C	76.6	71.8	74.8	74	70.9	39.6	74.7
N	11.8	10.8	11.4	11	10.9	7.1	12.6
O	11.6	14.8	12.7	13.6	15.9	31.1	12.3
Si	---	2.6	1.0	1.4	2.3	22.2	0.4
silane mol.% (top ~ 6 nm)**	0	~ 20.8	~ 8	~ 11	~ 18.4	~ 65	3.2

^*This spectrum was presented in Fig. S1;

^**The average mole percent of APTES in the bulk 50/50 APTES/pNIPAAm film is 13.4, and in the solution used for spin-coating is 45.2, suggesting that ~ 32 mol.% of APTES molecules were lost during the film preparation (i.e., spin-coating and thermal annealing) process.