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. 2017 Feb 28;11:91. doi: 10.3389/fnins.2017.00091

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Copyright © 2017 Hansen, Zahari, Ziegler and Kohlstedt.

This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.

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Double-barrier memristive device: (A) Schematic cross-section of the Al/Al₂O₃/Nb_xO_y/Au double-barrier memristive device. (B) Current density J as function of the applied bias voltage. In the upper graph in a linear scale for J was used, while in the lower panel the absolute value and a logarithmic scale was used to better visualize the obtained change in resistance.