. 2017 Jan 31;9(7):6228–6236. doi: 10.1021/acsami.6b14715

Table 2. Values for Circuit Elements (R_s, R and Q_o) dor Diodes Prepared with FPPTB Which Was Not Annealed, and Annealed at 100, 140, 165,and 250 °C.

Annealing Temperature (°C)	R_S (Ω)	R (Ω)	Q_o At Ω = 1 Rad/S (Nf)	N
As-Spun	21.7	25400	3.46	0.98
100	19.7	2072	4.48	0.99
140	23.2	1910	3.38	0.99
165	25.9	1094	3.34	0.99
250	19.7	188	5.84	0.99

Table 2. Values for Circuit Elements (Rs, R and Qo) dor Diodes Prepared with FPPTB Which Was Not Annealed, and Annealed at 100, 140, 165,and 250 °C.