Table 1. The PL decay effective lifetime ( ) and quantum yield ( η _PL) at injected carrier density of around 10¹⁵ cm⁻³, Trap states density ( η _Trap ), First order (k ₁), Second order (k ₂), and Third order (three-particle Auger) recombination constant (k ₃), Biexciton Auger recombination coefficient ( C _bx ).

	(ns)	η	ηTrap (cm−3)	k1 (s−1)	k2 (cm3 s−1)	k3 (cm6 s−1)	Cbx (cm2 s−1)
3D	1,300±100	0.08±0.02	3.5(±0.8) × 1016	9(±4) × 105 (Trap-assisted)	7(±3) × 10−10	3(±2) × 10−28	—
MQWs	22±2	0.60±0.05	Lower than 3 × 1013*	5(±3) × 107 (Excitonic)	2(±0.6) × 10−9	2(±1) × 10−26	—
2D (n=2)	—†	—†	—†	—†	—	—	0.10±0.02
2D (n=1)	0.25±0.03	0.02±0.01	—‡	4.0(±0.4) × 109 (Both)	—	—	0.44±0.09

TQW, thicker quantum well; 2D, two dimensional; 3D, three dimensional.

^*The trap states density associated with the TQWs (n≥5) in the MQWs film.

^†We could not achieve pure quasi-2D (n=2) perovskite bulk crystal film.

^‡2D (n=1) perovskite is not stable under high-power laser excitation.