Skip to main content
. 2017 Mar 8;7:43794. doi: 10.1038/srep43794

Figure 3. Resistive switching of Au/CH3NH3PbI3−xBrx/ITO.

Figure 3

(a) I-V characteristics of Au/perovskite/ITO structure (inset: top view of memory device). (b) Statistical distribution of set electric fields of the hybrid perovskite resistive switching memory. (c) Data retention characteristics of LRS and HRS states at room temperature. (d) Switching endurance of perovskite memory device.