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. 2017 Mar 13;7:44240. doi: 10.1038/srep44240

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(a) left vertical axis: photovoltage Δu_SD (THz beam on) and noise voltage (THz beam off) of sample A plotted as a function of the gate voltage V_G. Inset: schematics of the gated NW FET channel and thermoelectric (PTE) current direction; right vertical axis: Seebeck coefficients determined from the theoretical Mott equation; (b) Johnson–Nyquist noise (left) and noise equivalent power (right) of sample A plotted as a function of the gate bias; (c) left vertical axis: Responsivity (THz beam on) and noise voltage (THz beam off) of sample B plotted as a function of the gate voltage V_G. Right vertical axis: Seebeck coefficients; (d) Johnson–Nyquist noise (left) and noise equivalent power (right) of sample B plotted as a function of the gate bias.