Skip to main content
. 2017 Mar 24;3(3):e1602557. doi: 10.1126/sciadv.1602557

Fig. 3. Experimental characterization of individual CS-FETs.

Fig. 3

(A and B) Sensor response characteristics of a H2S-sensitive Pd-Au CS-FET (VDS = 100 mV; VBG = 0 V, relative humidity, ~30 to 40%; T ≈ 25°C). (C and D) Sensor response characteristics of a H2-sensitive Ni-Pd CS-FET (VDS = 2.5 mV; VBG = 0 V; relative humidity, ~30 to 40%; and T ≈ 25°C). (E and F) Sensor response characteristics of a NO2-sensitive Ni CS-FET (VDS = 2.5 mV; VBG = 0 V; relative humidity, ~45 to 50%; T ≈ 25°C).