Figure 1. Local temperature measuring sensor and in-situ Si nanostructures synthesized on a target side.

(a) Schematic of the sensor. (b) Enlarged view of a temperature-measuring resistance-temperature detector (RTD) with four-wire electric circuits. (c) Photograph of the completed sensor. (d) Vertical silicon nanowires (SiNWs), with an average height and diameter of 7 μm and 150 nm, respectively. (e) Regularly arranged silicon nanopillars (SiNPs) with a height of 2.5 μm and controlled diameter and pitch of 250 nm and 610 nm, respectively. The Si-nanostructures are synthesized just on the opposite side (Top side) of a thin film heater with an area of 70.0 × 12.0 mm².