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. 2017 Feb 28;17(3):483. doi: 10.3390/s17030483

Figure 2.

Figure 2

A cross-section structure of a pixel of a backside-illuminated (BSI) image sensor and trajectories of signal electrons. A: light shield; B: oxide; C: interface between the backside oxide layer and the silicon layer; D: backside hole accumulation layer; E: p layer, F: n layer; G: p-well; H: memory and circuit areas; I: oxide; J: electrodes and wires; K: collection gates.