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. 2017 Feb 28;17(3):483. doi: 10.3390/s17030483

Figure 3.

Figure 3

Monte Carlo simulation of trajectories of signal electrons and segments of the trajectories. (a) Trajectories; (b) travel time versus travel distance from the collection gate. S1: Motion in the backside hole accumulation layer; S2: Motion in the depleted bulk silicon layer; S3: Motion over the p-well; S4: Motion in a p-well hole; S5: Motion to a collection gate.