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. 2017 Mar 16;17(3):599. doi: 10.3390/s17030599

Figure 10.

Figure 10

The Ti getter was prepared under optimum conditions. (a) The integrating of Ti getter on the inside of the patterned glass cap; (b) The wafer-level packaging of the sensor; (c) The getter was fully activated after heated for 6 h at 600 °C; (d) Enlarged view of the prepared getter film at a magnification of 50 K by SEM.