. 2017 Mar 22;50(Pt 2):539–546. doi: 10.1107/S1600576717003259

Table 1. Thickness of amorphous SiO_x (t _{a-SiO_x}), amorphous Si (t _a-Si) and damaged strained crystalline Si (t _def-Si) determined from TEM images.

Sample	t _{a-SiO_x} (nm)	t _a-Si (nm)	t _def-Si (nm)
As implanted	8 ± 1	5 ± 1	65 ± 5
853 K	7 ± 2	20 ± 2	50 ± 5
1073 K	9 ± 3	23 ± 2	45 ± 5

Table 1. Thickness of amorphous SiOx (t a-SiOx), amorphous Si (t a-Si) and damaged strained crystalline Si (t def-Si) determined from TEM images.