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. 2015 Jul 23;5:12415. doi: 10.1038/srep12415

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Typical local hysteresis loops of BT-BFO measured by PFM (a) amplitude component; (b) polarization-voltage hysteresis loops; and (c) room-temperature polarization-voltage hysteresis loops using top electrode from electrical measurements. The material offers low coercive voltage and high remnant polarization, which are indispensable for low-power and high density non-volatile memory applications.