. 2015 Mar 30;5:9483. doi: 10.1038/srep09483

Table 1. Device parameters, i.e., J_sc, V_oc, FF, PCE and Φ_IQ of OSCs based on films of F8T2/PC₇₁BM (33 : 67 wt%) blend annealed for 10 min at T_an. The error bars of J_sc, V_oc, FF, PCE, and Φ_IQ were estimated from standard deviations of more than five OSC devices.

T_an (°C)	J_sc (mA/cm²)	V_oc (V)	FF	PCE (%)	Φ_IQ @ 400 nm
40	4.37 ± 0.08	0.96 ± 0.01	0.516 ± 0.003	2.17 ± 0.04	0.368 ± 0.011
80	4.17 ± 0.08	0.97 ± 0.01	0.521 ± 0.003	2.12 ± 0.04	0.342 ± 0.009
110	3.96 ± 0.17	0.987 ± 0.006	0.486 ± 0.002	1.92 ± 0.09	0.336 ± 0.009
150	3.68 ± 0.19	0.94 ± 0.02	0.40 ± 0.01	1.37 ± 0.01	0.285 ± 0.007
190	3.51 ± 0.10	0.92 ± 0.01	0.387 ± 0.003	1.25 ± 0.05	0.300 ± 0.010
240	2.94 ± 0.17	0.91 ± 0.01	0.35 ± 0.01	0.95 ± 0.06	0.310 ± 0.015

Table 1. Device parameters, i.e., Jsc, Voc, FF, PCE and ΦIQ of OSCs based on films of F8T2/PC71BM (33 : 67 wt%) blend annealed for 10 min at Tan. The error bars of Jsc, Voc, FF, PCE, and ΦIQ were estimated from standard deviations of more than five OSC devices.