Skip to main content
. 2014 Jun 27;4:5470. doi: 10.1038/srep05470

Table 2. Quality factors of various III–V FETs (experimental) and the proposed one in this work.

Materials Room temperature mobility (cm2/Vs) Cyclotron mass (m0) Quality Factor (Q) Gate Length (μm)
Monolayer Graphene   10 000 0.069 ~15.5 (6.39 THz) 2.4
0.104 ~29 (11.89 THz)        
Bilayer Graphene (AB stacking)   10 000 0.037 ~7.5 (6.85 THz)  
0.059 ~20 (9.84 THz)        
AlGaN/GaN25 ~1200 0.22 ~1 (1.1 THz) 1.15
InGaAs/InAlAs ~7000 0.04230 ~2.5 (2.5 THz) 0.05
AlGaAs/GaAs38 7480 0.063 ~5.5 (2.5 THz) 0.16