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. 2015 Apr 24;5:9945. doi: 10.1038/srep09945

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A) Schematic representation of the device structure superimposed on a false-color scanning electron microscope image for a completed PbS_PbI2/PbS_MPA device. Scale bar is 500 nm. B) Current-voltage characteristics using only a PbI₂ treatment shows low FF (blue trace) but using a secondary layer treated with MPA (red trace) and with the inorganic SCN^- ligand (gold trace) aids in band alignment yielding improved FF and PCE. C) Current-voltage characteristics of devices incorporating the four metal halides discussed above are shown. Using CdCl₂ as opposed to PbI₂ improves the V_OC to over 615 mV. D) External quantum efficiency (EQE) curves for PbS QDSCs with PbI₂ and CdCl₂ ligand treatments (PbS_MPA is the back layer as shown in panel A). E) Current-voltage characteristics of air-fabricated PbSe_PbI2 QDSC. The inset shows the external quantum efficiency for the device.