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Deposition conditions of the AlN films by PEALD
| Precursor 1 | TMA (99.999%) |
| Precursor 2 | Ar/N2/H2 (99.999%) |
| Carrier gas | Ar (99.999%) |
| Gas line temperature | 60 °C |
| Flow rate of carrier gas (UHP Ar) | 5 sccm |
| Flow rate of N precursor | 5 sccm |
| RF power | 60 W |
| RF plasma frequency | 13.56 MHz |
