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. 2017 Apr 19;8:14474. doi: 10.1038/ncomms14474

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(a) The 10 nm-thick BP film conductance as a function of top gate bias (V_TG) at different static back gate biases (V_BG) from −25 to 25 V. (b) The minimum conductance at the charge-neutrality point as a function of external displacement field. Inset: the top gate bias at which the minimum conductance occurs (V_TM) as a function of the back gate bias (V_BG).