Fig. 3. Magnetochiral anisotropy in ion-gated MoS₂.

(A) Temperature (T) dependence of sheet resistance R_sheet of a MoS₂-EDLT at a gate voltage V_G of 5.0 V. Inset: A close-up of the resistive transition. The T_c is 8.8 K as defined at the midpoint of the transition with sheet resistance R_sheet being 50% of the normal state. (B) Antisymmetrized sheet $({\mathit{R}}_{\text{sheet}}^{2\mathrm{\omega }},\text{red})$ and Hall $({\mathit{R}}_{\text{Hall}}^{2\mathrm{\omega }},\text{black})$ second harmonic magnetoresistance at 2 K. Compared to the signals of ${\mathit{R}}_{\text{sheet}}^{2\mathrm{\omega }}$, the value of ${\mathit{R}}_{\text{Hall}}^{2\mathrm{\omega }}$ is much smaller. (C) Magnetoresistance at 2, 3, 4, 5, 6, 7, 8, 9, 10, 12, and 15K at I_DS of 17 μA. (D) Antisymmetrized second harmonic sheet magnetoresistance ${\mathit{R}}_{\text{sheet}}^{2\mathrm{\omega }}$ at 2 to 10 K. (E) Maximum of the ${\mathit{R}}_{\text{sheet}}^{2\mathrm{\omega }}$ as a function of temperature. (F) Temperature dependence of γ at the I_DS of 17 μA. The γ suddenly increases up to ~1200 T⁻¹ A⁻¹ around the superconducting transition. Error bars are estimated by the uncertainty of the R_sheet because of the broad peak of the ${\mathit{R}}_{\text{sheet}}^{2\mathrm{\omega }}\dot{}$