Growth defect phenotypes are associated with mutations in specific essential genes. Overnight cultures of strains grown in the presence of galactose were 10-fold serially diluted and dotted onto plates containing stresses and different carbon sources (G = 2% galactose and GR = 0.5% galactose + 2% raffinose). After two days growth the plates were photographed. Concentrations or treatments are: no stress (28°C), 37°C, UV (120 J m−2), 5 mM hydrogen peroxide solution (H2O2), 0.25 mM paraquat dichloride hydrate (paraquat), 0.25 mM menadione, 0.4 mM Luperox TBH70X, 0.4 mM tert-butyl hydroperoxide solution (tBOOH), 0.04 % methyl methanesulfonate (MMS), 0.06 % ethidium bromide (EtBr) and 0.01 mM cadmium sulfate (CdSO4).