Fig. 3. Effect of reaction time on the growth of sCOFA. STM images (a, b, c and d; 100 × 100 nm2) of sCOFA achieved after heating at the gas–solid interface at 120 °C for different reaction times of (a) 0.5 h, (b) 1 h, (c) 2 h and (d) 3 h. (e) Dependence of the coverage of sCOFA on the reaction time. Imaging conditions: (a) V bias = 700 mV, I t = 500 pA; (b) V bias = 700 mV, I t = 650 pA; (c) V bias = 700 mV, I t = 600 pA; (d) V bias = 700 mV, I t = 500 pA.
