Figure 4. Ultraflexible organic integrated circuits.

(a) Picture and (b) schematic illustration of the 1.2-μm-thick ultraflexible amplifier array comprising organic transistors. (c) Cross-sectional image and (d) high-resolution cross-sectional electron microscopy image of an organic transistor on a 1.2-μm-thick plastic substrate. (e) Electrical characteristics of an organic transistor before, during and after bending to a radius of 50 μm. The transistor is fabricated on a 1.2-μm-thick PEN substrate and 1.3-μm-thick parylene encapsulation stack. The transistor channel is located at the neutral strain position. The transistor characteristics confirm that the devices are not damaged when bent to a radius of 50 μm.