Figure 1. Effect of buffer and active layer thicknesses on room temperature carrier density and mobility.

Variation of n_3D (black open circles) and μ_300 K (red solid circles) in doped BaSnO₃ films as a function of (a) t_buffer for fixed t_active=31 nm, and (b) t_active for fixed t_buffer=124 nm. Inset shows a schematic of the structure.