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. 2017 May 5;8:15167. doi: 10.1038/ncomms15167

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μ versus T for doped BaSnO₃ films, (a) n_3D=1.51 × 10¹⁹ cm⁻³, (b) n_3D=4.06 × 10²⁰ cm⁻³, and (c) n_3D=1.02 × 10²¹ cm⁻³. Contributions from different carrier scattering mechanisms are shown with dotted curves. Dislocation density as calculated from the model were—(a) Z_DZ_DISN_DIS=2.3 × 10¹² cm⁻², (b) Z_DZ_DISN_DIS=7.0 × 10¹¹ cm⁻², and (c) Z_DZ_DISN_DIS=2.8 × 10¹² cm⁻² respectively for the three samples, where Z_D and Z_DIS are the overall charge states of the donors and charged dislocations respectively. See method section for more details.