Table 1. Comparison between the Presented CMOS-Based Nanowire Sensing System and Other Relevant CMOS Systems Recently Published in the Literature.
ref 16 | ref 17 | ref 23 | this work | |
---|---|---|---|---|
technology | 0.18 μm | 0.18 μm | 0.35 μm | 0.35 μm |
readout scheme | Res. to Freq converter | TIA + single slope ADC | V amp. + SAR ADC | ΔΣ + I to Freq converter |
input range | 100 kΩ to 1 GΩ | 100 pA to 5.3 nA | n.a. | 20 pA to μA (7 kΩ to 7.5 GΩ) |
channel count | 1 | 64 | 1 | 16 |
multiplexed | yes | no | only 1 sensor | no |
min/max resolution | 5/7 bits | 10 bits | 9.4 bits | 6.6/13.3 bits |
min/max noise | n.a. | 7pARMS | n.a. | 0.54/250pARMS |
bandwidth | 100 Hz | 300 Hz | 100 kHz | 1 kHz (max) |
power supply | 1.8 V | 1.8 V | 3.3 V | 3.3 V |
power consumption | 396 μW | 1.8 mW | 600 μW | 35 mW |
chip size | 200 × 200 μm2 | 4.3 × 4.3 mm2 | 6.2 mm2 | 3.4 × 4 mm2 |
notes | 2 chips | 2 chips | monolithic (1 NW) | 2 chips and monolithic |