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. Author manuscript; available in PMC: 2017 May 10.
Published in final edited form as: Anal Chem. 2015 Sep 30;87(19):9982–9990. doi: 10.1021/acs.analchem.5b02604

Table 1. Comparison between the Presented CMOS-Based Nanowire Sensing System and Other Relevant CMOS Systems Recently Published in the Literature.

ref 16 ref 17 ref 23 this work
technology 0.18 μm 0.18 μm 0.35 μm 0.35 μm
readout scheme Res. to Freq converter TIA + single slope ADC V amp. + SAR ADC ΔΣ + I to Freq converter
input range 100 kΩ to 1 GΩ 100 pA to 5.3 nA n.a. 20 pA to μA (7 kΩ to 7.5 GΩ)
channel count 1 64 1 16
multiplexed yes no only 1 sensor no
min/max resolution 5/7 bits 10 bits 9.4 bits 6.6/13.3 bits
min/max noise n.a. 7pARMS n.a. 0.54/250pARMS
bandwidth 100 Hz 300 Hz 100 kHz 1 kHz (max)
power supply 1.8 V 1.8 V 3.3 V 3.3 V
power consumption 396 μW 1.8 mW 600 μW 35 mW
chip size 200 × 200 μm2 4.3 × 4.3 mm2 6.2 mm2 3.4 × 4 mm2
notes 2 chips 2 chips monolithic (1 NW) 2 chips and monolithic