Skip to main content
. Author manuscript; available in PMC: 2017 Nov 1.
Published in final edited form as: Adv Mater. 2017 Mar 15;29(17):10.1002/adma.201606852. doi: 10.1002/adma.201606852

Figure 5.

Figure 5

a) Map of device resistances of a fabricated CNT sensor array (NC = nonconnected devices). b) IdsVds characteristics of all the CNT devices of one selected row of the array (row number 23). The resistance has been calculated between −20 and 20 mV. c) Histogram of the resistance values of the full array. d) Correlation between the numbers of CNTs connecting the electrodes as observed by SEM and the measured resistances of the CNT devices.