Table 5.
PECVD deposition parameters for the three different wafer composition employed in this work.
| Wafer ID | SiH4 (sccm) | NH3 (sccm) | N2 (sccm) | Platen Temperature (°C) |
|---|---|---|---|---|
| Wafer 01 | 1.8 | 0 | 980 | 350 |
| Wafer 02 | 3.6 | 0 | 980 | 350 |
| Wafer 03 | 7.2 | 0 | 980 | 350 |
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