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. 2017 Apr 11;7:786. doi: 10.1038/s41598-017-00865-7

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© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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(a) Absorption spectrum of 1 µm BN grown on sapphire substrate compared with the absorption spectra of 10 nm and 30 nm 2D layered h-BN. Inset shows the absorption peaks related to defect levels. (b) Cathodoluminescence at 77 K under different excitation energy and inset shows the CL peaks in deep UV region. (c) Wavelength distribution and (d) intensity distribution of photoluminescence mapping performed at room temperature for 2-inch 1 µm BN/sapphire wafer.