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. 2017 Apr 11;7:786. doi: 10.1038/s41598-017-00865-7

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© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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(a) BN wafer after device fabrication. Insets are microscope image of the metal contact patterns and scanning electron microscopy image of interdigitated electrodes. (b) Microscope image showing the local part where the film was separated from the substrate (area 2). (c) A small piece of freestanding BN prototype membrane lifted by tweezers which folded presenting the flexibility of the film. (d) Typical dark current-voltage (I-V) characteristics of the fabricated device prototypes and inset is the schematic of the measurements.