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. 2017 Apr 26;7:1202. doi: 10.1038/s41598-017-01391-2

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© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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(a) A composite optical microscope image of the final completed device used for high frequency testing. G is the gate electrode, S is the source electrode, while the D’s are the common drain electrode. The structure is designed to allow RF testing with 500 micron pitch GSG probes. (b) A cross section of the top gate transistor design. Source, drain, and gate were all printed using nanoparticle silver solution.