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. 2017 May 3;7:1466. doi: 10.1038/s41598-017-01502-z

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© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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The vicinal surfaces allows for high crystalline quality chalcogenides with reduced structural disorder. (a) X-ray diffraction (XRD) ω-2ϑ scans for crystalline GeSbTe (GST) grown on Si (111) with a miscut orientation (β) of 0.03° (black), 3° (green), 4° (red), 6° (blue). The substrate miscut improves the FWHM of the vacancy layer (VL) peaks. The gray curve is the simulation of GST grown on miscut. (b) Cross-view [11–20] high resolution HAADF-STEM micrograph of epitaxial GST (00.1) on Si (111) with β = 4°. Van der Waals (vdW) gaps (dashed yellow lines) occur every 7–9 atomic layers.