Skip to main content
. 2017 Mar 15;4(4):868–872. doi: 10.1021/acsphotonics.6b00935

Figure 1.

Figure 1

Sketch of the electrically pumped wavelength-tunable Q-LED. The n-i-p diode contains GaAs QDs embedded in Al0.4Ga0.6As barriers and is integrated on a PMN-PT piezoelectric actuator, which provides variable strain fields to tune the photon emission energy. Vd is the bias voltage applied to the diode and Vp is the voltage applied to the actuator.