Figure 1.
Sketch of the electrically pumped wavelength-tunable Q-LED. The n-i-p diode contains GaAs QDs embedded in Al0.4Ga0.6As barriers and is integrated on a PMN-PT piezoelectric actuator, which provides variable strain fields to tune the photon emission energy. Vd is the bias voltage applied to the diode and Vp is the voltage applied to the actuator.