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. 2017 May 15;8:15197. doi: 10.1038/ncomms15197

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(a) The band structure of the Cd_0.7Hg_0.3Te/HgTe heterostructure close to the Γ-point for U_G=1.9 V. The chemical potential (green line) crosses the Dirac-like surface state (red solid line) in the band gap corresponding to the electron CR Ω_ce. The dashed red line shows the linear dispersion of the 2D surface state without hybridization with the heavy-hole band. (b) 2D dc conductivity σ₀ of different charge carriers (e and Σs=s1+s2), obtained by Drude-like fits to equations (2) and (3) of the magnetooptical spectra. The dimensionless values are given relative to the impedance of free space . The inset shows the e-CR in terms of Ω_ce/B as a function of the gate voltage U_G.

Inline graphic — (a) The band structure of the Cd_0.7Hg_0.3Te/HgTe heterostructure close to the Γ-point for U_G=1.9 V. The chemical potential (green line) crosses the Dirac-like surface state (red solid line) in the band gap corresponding to the electron CR Ω_ce. The dashed red line shows the linear dispersion of the 2D surface state without hybridization with the heavy-hole band. (b) 2D dc conductivity σ₀ of different charge carriers (e and Σs=s1+s2), obtained by Drude-like fits to equations (2) and (3) of the magnetooptical spectra. The dimensionless values are given relative to the impedance of free space . The inset shows the e-CR in terms of Ω_ce/B as a function of the gate voltage U_G.