Figure 4.

Schematic Brouwer diagrams (log concentration versus log pO${}_2$) for (a) SnO${}_2$:Sb (ATO), (b) ZnO:Al (AZO), and (c) In${}_2$O${}_3$:Sn (ITO). Vertical dotted lines separate different electroneutrality regimes, as denoted at the top of each column. Fractions indicate line slopes. Concentrations of electrons (n), doubly charged O vacancies ($\left[{\mathrm{V}}_{\mathrm{O}}^{••}\right]$), doubly charged Zn vacancies ($\left[{\mathrm{V}}_{\mathrm{Zn}}^{{}^{\prime \prime }}\right]$), Sb donors ($\left[{\mathrm{Sb}}_{\mathrm{Sn}}^{•}\right]$), Al donors ($\left[{\mathrm{Al}}_{\mathrm{Zn}}^{•}\right]$), Sn donors ($\left[{\mathrm{Sn}}_{\mathrm{In}}^{•}\right]$), and Frank-Köstlin defects ($\left[{\left({\mathrm{Sn}}_{\mathrm{In}}^{•}{\mathrm{O}}_{\mathrm{i}}^{{}^{\prime \prime }}\right)}^{\mathrm{x}}\right]$) are shown where relevant.