Table 3.
Year | Device Structure | VOC (V) | JSC (mA·cm−2) | FF | PCE (%) | Ref. |
---|---|---|---|---|---|---|
2016 | FTO|ZnO-TiO2 NW|ZrO2|MAPbI3|Carbon | 0.96 | 14.8 | 0.58 | 8.24 | [137] |
2016 | ITO|Ni-ZnO NW|PCBM|(MA)x(GA)1-xPbI3|P3HT|Au | 0.83 | 23.7 | 0.70 | 13.8 | [34] |
2015 | FTO|ZnO NW|TiO2 core shell|MAPbI3|Spiro|Au | 1.00 | 22.0 | 0.70 | 15.4 | [61] |
2014 | FTO|TiO2|ZnO SL|ZnO NW|MAPbI3|Spiro|Ag | 0.93 | 18.0 | 0.62 | 10.4 | [134] |
2014 | FTO|TiO2 BL/SL|Nb-TiO2 NR|MAPbIxBr1-x|Spiro|Au | 0.87 | 16.5 | 0.52 | 7.50 | [113] |
2014 | FTO|TiO2 SL|Sn-TiO2 NR|MAPbI3|Spiro|Ag | 0.74 | 14.9 | 0.52 | 6.31 | [114] |
2015 | FTO|TiO2 BL|TiO2 NR/Layer|MAPbI3|Spiro|Au | 0.95 | 19.8 | 0.72 | 13.5 | [115] |
2015 | FTO|WO3 BL|WO3 NR|TiO2|MAPbI3|Spiro|Ag | 0.86 | 15.00 | 0.70 | 9.10 | [38] |