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. 2016 Jul 27;7(11):6649–6661. doi: 10.1039/c6sc02448c

Fig. 3. Transfer characteristics of the OFETs prepared with (a) 0F, (b) 1F, (c) 2F, (d) 3F, and (e) 4F films fabricated on OTS-modified substrates and the device performances of OFETs fabricated with 0F–4F.

Fig. 3