Skip to main content
. 2016 Jul 27;7(11):6649–6661. doi: 10.1039/c6sc02448c

Fig. 5. (a) The current density–voltage (J–V) characteristics and (b) external quantum efficiency (EQE) curves based on the 0F–4F/PC71BM devices. (c) Comparisons of SCLC hole and electron mobilities of the 0F–4F:PC71BM films, and the fill factor values of 0F–4F.

Fig. 5